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Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor
 

Summary: Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex
Cl4(CH3CN)W(N-pip) as a Single-Source Precursor
Dojun Kim,a
Oh Hyun Kim,a
Hiral M. Ajmera,a
Tim Anderson,a
Jürgen Koller,b
and Lisa McElwee-Whiteb
a
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
USA
b
Department of Chemistry, University of Florida, Gainesville, Florida 32611 USA
The tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip)
(1) was used as a single-source precursor for growth of tungsten
carbonitride (WNxCy) by metal-organic chemical vapor deposition
(CVD) in H2 carrier. Multiple spectroscopic techniques were used
for preliminary evaluation of the suitability of 1 as a precursor and
to suggest possible fragmentation pathways. The effect of growth
temperature on film microstructure, lattice parameter, average

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science