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Device modeling and simulation of the performance of Cu(In1x,Gax)Se2 solar cells

Summary: Device modeling and simulation of the performance of
Cu(In1x,Gax)Se2 solar cells
Jiyon Song a
, Sheng S. Li a,*, C.H. Huang b
, O.D. Crisalle c
, T.J. Anderson c
Department of Electrical and Computer Engineering, University of Florida, 561, EB-63 Gainesville, FL 32611-6130, USA
Department of Electrical Engineering, National Dong Hwa University, Hualien Taiwan 974
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
Received 2 May 2003; received in revised form 30 June 2003; accepted 2 July 2003
Device modeling and simulation studies of a Cu(In1x,Gax)Se2 (CIGS) thin film solar cell have been carried out. A
variety of graded band-gap structures, including space charge region (SCR) grading, back surface region grading, and
double grading of the CIGS absorber layer, are examined. The device physics and performance parameters for different
band-gap profiles were analyzed. Based on the simulation results, an optimal graded band-gap structure for the CIGS
solar cell is proposed. The performance of the optimally graded band-gap cell is superior to that of the uniform band-
gap cell. The SCR grading of the CIGS absorber layer improves the open-circuit voltage (Voc) without significantly


Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida


Collections: Materials Science