Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
136 IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 3, MARCH 2005 A Submicrometer 252 GHz fT and 283 GHz fMAX
 

Summary: 136 IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 3, MARCH 2005
A Submicrometer 252 GHz fT and 283 GHz fMAX
InP DHBT With Reduced CBC Using Selectively
Implanted Buried Subcollector (SIBS)
James C. Li, Student Member, IEEE, Mary Chen, Member, IEEE, Donald A. Hitko, Member, IEEE,
Charles H. Fields, Senior Member, IEEE, Binqiang Shi, Rajesh Rajavel, Peter M. Asbeck, Fellow, IEEE, and
Marko Sokolich, Senior Member, IEEE
Abstract--The selectively implanted buried subcollector (SIBS)
is a method to decouple the intrinsic and extrinsic BC of InP-
based double-heterojunction bipolar transistors (DHBTs). Similar
to the selectively implanted collector (SIC) used in Si-based bipolar
junction transistors (BJTs) and HBTs, ion implantation is used to
create a N+ region in the collector directly under the emitter. By
moving the subcollector boundary closer to the BC junction, SIBS
allows the intrinsic collector to be thin, reducing , while simulta-
neously allowing the extrinsic collector to be thick, reducing BC.
For a 0.35 6 m2 emitter InP-based DHBT with a SIBS, 6 fF
total BC and 6 V BVCBO were obtained with a 110-nm in-
trinsic collector thickness. A maximum of 252 GHz and MAX
of 283 GHz were obtained at a CE of 1.6 V and of 7.52 mA. De-

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering