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High-Q RF Passives on Organic Substrates Using a Low-Cost Low-Temperature Laminate Process
 

Summary: High-Q RF Passives on Organic Substrates Using a Low-Cost
Low-Temperature Laminate Process
Sidharth Dalmia, Seock Hee Lee, Swapan Bhattacharya,
Farrokh Ayazi* and Madhavan Swaminathan
School of Electrical and Computer Engineering
Packaging Research Center
Georgia Institute of Technology
*contact author: ayazi@ece.gatech.edu ; Tel: 1-404-894-9496; Fax: 1-404-894-4700
Abstract
This paper reports on a low-cost low-temperature (150C) laminate batch fabrication
process for implementation of high-Q RF passive components (inductors and capacitors)
in system-on-package (SOP) applications. Using this process, various designs of
integrated inductors with Q-factors in the range of 60-180 for Bluetooth/IEEE 802.11b
(2.4GHz), GSM1800 (1.8GHz) and GSM900 (900 MHz) communication standards have
been implemented on an organic package substrate. For the first time, a maximum Q of
180 was measured for a 4.8nH inductor at 2.0 GHz on an organic substrate with a self-
resonance frequency (SRF) of 5.5 GHz within an area of 9mm2
. High-Q inductors and
capacitors integrated on low-loss organic package substrates can find numerous RF and
microwave SOP applications (such as VCO, IF/RF bandpass filters, LNA, etc), in which

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering