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Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements
 

Summary: Magnetization-graded ferromagnets: The magnetic analogs
of semiconductor junction elements
Joseph V. Mantese, Adolph L. Micheli, and Norman W. Schubring
Delphi Research Laboratories, Shelby Township, Michigan 48315
R. W. Hayes and G. Srinivasan
Department of Physics, Oakland University, Rochester, Michigan 48309
S. P. Alpaya
Department of Materials Science and Engineering and Institute of Materials Science University of
Connecticut, Storrs, Connecticut 06269
Received 26 April 2005; accepted 8 July 2005; published online 15 August 2005
Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction
devices. The internal, or the "built-in," magnetic field is intrinsic to the structure and is determined
from ferromagnetic resonance microscopy. Magnetic analysis of a nickel­zinc­ferrite system in
terms of its spatially dependent order parameter, the magnetization, yields a value for the internal
magnetic field consistent with experimental observations. Our results are extended to the general
class of ferroic and other "smart" materials via a spatially dependent free-energy potential. © 2005
American Institute of Physics. DOI: 10.1063/1.2012526
The studies of semiconductors, ferroelectrics, ferromag-
netics, ferroelastics, and a wide variety of other, what are
often referred to as ferroic materials and systems, have his-

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science