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Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators
 

Summary: Ion-sculpting of nanopores in amorphous metals, semiconductors,
and insulators
H. Bola George,1
David P. Hoogerheide,2
Charbel S. Madi,1
David C. Bell,1,3
Jene A. Golovchenko,1,2
and Michael J. Aziz1,a
1
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
2
Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
3
Center for Nanoscale Systems, Harvard University, Cambridge, Massachusetts 02138, USA
Received 17 March 2010; accepted 7 May 2010; published online 1 July 2010
We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range
of amorphous materials including insulators SiO2 and SiN , semiconductors a-Si , and metallic
glasses Pd80Si20 --the building blocks of a single-digit nanometer electronic device. Ion irradiation
of nanopores in crystalline materials Pt and Ag does not cause nanopore closure. Ion irradiation of
c-Si pores below 100 C and above 600 C, straddling the amorphous-crystalline dynamic

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science