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Ballistic hole emission luminescence Ian Appelbaum,a)
 

Summary: Ballistic hole emission luminescence
Ian Appelbaum,a)
K. J. Russell, I. Shalish, and V. Narayanamurti
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
M. P. Hanson and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106
(Received 18 May 2004; accepted 22 July 2004)
Using a method complementary to ballistic electron emission luminescence (BEEL), we
demonstrate tunnel-junction injection of sub-band-gap hot holes into the valence band of a
semiconductor heterostructure to generate band-gap luminescence. This mechanism can be used in
a scanning-probe geometry for the development of a simultaneous hole transport and luminescence
microscopy of p-type Schottky devices. 2004 American Institute of Physics.
[DOI: 10.1063/1.1793347]
Ballistic electron emission luminescence (BEEL) utilizes
tunnel-junction injection of hot electrons ballistically
through a metal base and into a specifically designed p-i-n
heterostructure collector for subsequent band-gap lumines-
cence. This technique has been used in the solid state for
light-emitting metal base transistors,1
luminescent spin-valve

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science