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Synthesis of GaNxAs1x thin films by pulsed laser melting and rapid thermal annealing of N
 

Summary: Synthesis of GaNxAs1x thin films by pulsed laser melting and rapid
thermal annealing of N
-implanted GaAs
K. M. Yua)
and W. Walukiewicz
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
M. A. Scarpulla and O. D. Dubon
Materials Sciences Division, Lawrence Berkeley National Laboratory and Department of Material
Science and Engineering, University of California, Berkeley, California 94720
J. Wu, J. Jasinski, Z. Liliental-Weber, and J. W. Beeman
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
M. R. Pillai and M. J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 14 March 2003; accepted 22 April 2003
We present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1 x
using N -implantation followed by a combination of pulsed laser melting and rapid thermal
annealing. Thin films of GaNxAs1 x with x as high as 0.016 and an activation efficiency of the
implanted N up to 50% have been synthesized with structural and optical properties comparable to
films grown by epitaxial deposition techniques with similar substitutional N content. The effects of
N implantation dose, laser energy fluence, and rapid thermal annealing temperature on the N

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science