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Summary: Performance comparison of Pb,,Zr0.52Ti0.48...O3-only and
Pb,,Zr0.52Ti0.48...O3-on-silicon resonators
Hengky Chandrahalim,1,a
Sunil A. Bhave,1
Ronald Polcawich,2
Jeff Pulskamp,2
Daniel Judy,2
Roger Kaul,2
and Madan Dubey2
1
OxideMEMS Laboratory, Cornell University, Ithaca, New York 14853, USA
2
U.S. Army Research Laboratory, Adelphi, Maryland 20783, USA
Received 3 July 2008; accepted 21 November 2008; published online 10 December 2008
This paper provides a quantitative comparison and explores the design space of lead zirconium
titanate PZT only and PZT-on-silicon length-extensional mode resonators for incorporation into
radio frequency microelectromechanical system filters and oscillators. We experimentally measured
the correlation of motional impedance RX and quality factor Q with the resonators' silicon layer
thickness tSi . For identical lateral dimensions and PZT-layer thicknesses tPZT , the PZT-on-silicon
resonator has higher resonant frequency fC , higher Q 5100 versus 140 , lower RX 51 versus
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