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Coherent Spin Transport through a 350 Micron Thick Silicon Wafer Biqin Huang,1,* Douwe J. Monsma,2
 

Summary: Coherent Spin Transport through a 350 Micron Thick Silicon Wafer
Biqin Huang,1,* Douwe J. Monsma,2
and Ian Appelbaum1
1
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware, 19716, USA
2
Cambridge NanoTech Inc., Cambridge, Massachusetts 02139, USA
(Received 6 June 2007; published 26 October 2007)
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through
a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicu-
lar magnetic field at different accelerating electric fields reveal high spin coherence with at least 13
precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-
detector electron transit time. These transit time values are associated with output magnetocurrent changes
(from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the
results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower
bound in silicon of over 500 ns at 60 K.
DOI: 10.1103/PhysRevLett.99.177209 PACS numbers: 85.75.d, 72.25.Dc, 72.25.Hg, 72.25.Rb
Silicon (Si) has been broadly viewed as the ideal mate-
rial for spintronics due to its low atomic weight, lattice
inversion symmetry, and low isotopic abundance of species

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science