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Summary: Geometric dephasing-limited Hanle effect in long-distance lateral silicon
spin transport devices
Biqin Huang,1,a
Hyuk-Jae Jang,1
and Ian Appelbaum2
1
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716, USA
2
Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland,
College Park, Maryland 20742-4111, USA
Received 12 September 2008; accepted 5 October 2008; published online 23 October 2008
Evidence of spin precession and dephasing "Hanle effect" induced by a magnetic field is the only
unequivocal proof of spin-polarized conduction electron transport in semiconductor devices.
However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be
impossible to measure. Using a silicon device with lateral injector-detector separation of over
2 mm and geometrically induced dephasing making spin transport completely incoherent, we show
experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic
field. © 2008 American Institute of Physics. DOI: 10.1063/1.3006333
The "Hanle effect," which describes the phenomenon of
suppressed spin precession signal due to precession angle
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