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High magnetic field sensor using LaSb2 D. P. Young, R. G. Goodrich, J. F. DiTusa, S. Guo, and P. W. Adamsa)
 

Summary: High magnetic field sensor using LaSb2
D. P. Young, R. G. Goodrich, J. F. DiTusa, S. Guo, and P. W. Adamsa)
Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana, 70803
Julia Y. Chan
Department of Chemistry, Louisiana State University, Baton Rouge, Louisiana, 70803
Donavan Hallb)
National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida, 32306
Received 20 January 2003; accepted 31 March 2003
The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are
reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the
layers. Below 10 K the perpendicular magnetoresistance of LaSb2 becomes temperature
independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with
no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a
high field carrier density of n 3 1020
cm 3
. The feasibility of using LaSb2 for magnetic field
sensors is discussed. 2003 American Institute of Physics. DOI: 10.1063/1.1577390
One of the most successful strategies for producing tech-
nologically relevant magnetoresistive materials is to enhance
the effects of field-dependent magnetic scattering processes

  

Source: Adams, Philip W. - Department of Physics and Astronomy, Louisiana State University

 

Collections: Materials Science