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Domain wall trapping at mesoscopic ferromagnetic junctions A. O. Adeyeyea)
 

Summary: Domain wall trapping at mesoscopic ferromagnetic junctions
A. O. Adeyeyea)
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
4 Engineering Drive 3, National University of Singapore, 117576 Singapore
M. E. Welland
Nanoscale Science Laboratory, Department of Engineering, University of Cambridge, Cambridge CB2 1PZ,
United Kingdom
Received 24 April 2002; accepted for publication 18 July 2002
We have investigated the effects of domain walls DWs on electron transport across mesoscopic
ferromagnetic junctions. The structures consist of a single 30 nm Ni80Fe20 thick 0.5 24 m wire
bisected by a mesoscopic junction with width w in the range 0.21 m. Using magnetoresistance
MR measurements, we observed directly an extra resistivity associated with controlled domain
wall nucleation process on a complete field hysteresis loop for various junction widths. For the field
applied along the wire hard axis, we observed complex MR curves at low fields for wires with w
0 compared with a simple parabolic MR behavior of a single wire of the same lateral dimension.
This is attributed to the trapping of DWs at the junction area perpendicular to the current direction.
The MR behavior for the field applied along the wire easy axis is strikingly dependent on the
junction width due to the variation in spin configurations at the junction area. The field angle
dependent MR responses and simple micromagnetic simulations suggest that the magnetization
reversal process at the junction area is mediated by domain wall propagation. 2002 American

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science