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Electronic measurement and control of spin transport Ian Appelbaum1

Summary: LETTERS
Electronic measurement and control of spin transport
in silicon
Ian Appelbaum1
, Biqin Huang1
& Douwe J. Monsma2
The spin lifetime and diffusion length of electrons are transport
parameters that define the scale of coherence in spintronic devices
and circuits. As these parameters are many orders of magnitude
larger in semiconductors than in metals1,2
, semiconductors could
be the most suitable for spintronics. So far, spin transport has only
been measured in direct-bandgap semiconductors3­9
or in com-
bination with magnetic semiconductors, excluding a wide range
of non-magnetic semiconductors with indirect bandgaps. Most
notable in this group is silicon, Si, which (in addition to its
market entrenchment in electronics) has long been predicted a
superior semiconductor for spintronics with enhanced lifetime
and transport length due to low spin­orbit scattering and lattice


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park


Collections: Engineering; Materials Science