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Abstract We consider induced voltages on electronic
components housed inside complicated enclosures and subjected
to high frequency radiation. The enclosure is assumed to be large
compared to the wavelength in which case there is strong
dependence of wave properties (eigenvalues, eigenfunctions,
scattering, and impedance matrices, etc.) on small perturbations.
The source(s) and sink(s) of radiation are treated as generalized
ports and their coupling to the enclosure is quantified by an
appropriate nonstatistical radiation impedance matrix. The field
fluctuations within the enclosure are described in a statistical
sense using the hypothesis that these fluctuations conform to
random matrix theory. The random matrix theory approach
implies that the wave fluctuations have "universal" properties in
the sense that the statistical description of these properties
depends only upon the value of a single, experimentally
accessible, dimensionless lossparameter. We formulate a
statistical prediction algorithm for the induced voltages at specific
points within complicated enclosures when subjected to short
