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Summary: 2556 IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 5, SEPTEMBER 2002
Magnetic Properties of Lateral "Antidot" Arrays
M. B. A. Jalil, Member, IEEE, S. L. A. Phoa, S. L. Tan, and A. O. Adeyeye, Member, IEEE
Abstract--Micromagnetic and transport modeling are per-
formed with a ferromagnetic film with an etched array of square
holes ("antidots"). In the submicron-size range, the presence of
antidots significantly increases the coercivity of the film. The
antidot film shows a complex magnetoresistance (MR) behavior
when the field direction is rotated due to the interplay between the
induced easy axes along the antidot edges and the field and current
directions. The MR response can be further modified by changing
the composition of the film and antidot and by introducing an
insulating barrier around the antidots.
Index Terms--Anisotropic magnetoresistance, antidot array,
geometry-induced anisotropy, micromagnetic simulation.
I. INTRODUCTION
THERE has been a growing interest in magnetic nanostruc-
tures in which new magnetic properties can be engineered
by changing their geometry [1]. In particular, the effects of an
etched array of holes or "antidots" in a permalloy (Py) film have
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