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SILICON NITRIDE-ON-SILICON BAR RESONATOR USING INTERNAL ELECTROSTATIC TRANSDUCTION
 

Summary: SILICON NITRIDE-ON-SILICON BAR RESONATOR USING INTERNAL
ELECTROSTATIC TRANSDUCTION
Sunil A. Bhave and Roger T. Howe
Berkeley Sensor & Actuator Center, 497 Cory Hall, University of California, Berkeley, CA 94720, USA
ABSTRACT
This paper demonstrates an electrostatic transducer for
lateral-mode bar resonators in which a high dielectric
constant (high-) thin film is sandwiched between
polysilicon electrodes and the top surface of the
resonator. This internal electrostatic transducer has
several advantages over both air-gap electrostatic and
piezoelectric transduction, including lower motional
impedance (Rx), compatibility with advanced scaled
CMOS device technology, and extended dynamic range.
The resonators are fabricated on 4 Ám thick heavily-
doped SOI wafers with 200 nm thick silicon nitride film
as the dielectric transducer. Using this configuration, we
have demonstrated a 121 MHz silicon nitride-on-silicon
lateral-mode bar resonator with a quality factor (Q) of
2,100 in air and motional impedance of 9 k.

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering