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Intrinsic electron glassiness in strongly localized Be films Z. Ovadyahu,1 Y. M. Xiong,2 and P. W. Adams2
 

Summary: Intrinsic electron glassiness in strongly localized Be films
Z. Ovadyahu,1 Y. M. Xiong,2 and P. W. Adams2
1Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
2Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA
Received 24 August 2010; revised manuscript received 13 October 2010; published 3 November 2010; corrected 12 November 2010
We present results of out-of-equilibrium transport measurements made on strongly localized Beryllium films
and demonstrate that these films exhibit all the earmarks of intrinsic electron glasses. These include slow
logarithmic relaxation, memory effects, and more importantly, the observation of a memory dip that has a
characteristic width compatible with the carrier concentration of beryllium. The latter is an empirical signature
of the electron glass. Comparing various nonequilibrium attributes of the beryllium films with other systems
that exhibit intrinsic electron-glasses behavior reveals that high carrier concentration is their only common
feature rather than the specifics of the disorder that rendered them insulating. It is suggested that this should be
taken as an important hint for any theory that attempts to account for the surprisingly slow relaxation times
observed in these systems.
DOI: 10.1103/PhysRevB.82.195404 PACS number s : 72.20.Ee, 72.20.Ht, 72.70. m
I. INTRODUCTION
The interplay between static disorder and Coulomb inter-
actions may precipitate a glassy state in an Anderson insula-
tor. This "electron-glass" scenario was discussed in several
papers.14 In theory, this property is generic to all degenerate

  

Source: Adams, Philip W. - Department of Physics and Astronomy, Louisiana State University

 

Collections: Materials Science