Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
18 m THICK HIGH FREQUENCY CAPACITIVE HARPSS RESONATORS WITH REDUCED MOTIONAL RESISTANCE
 

Summary: 18 m THICK HIGH FREQUENCY CAPACITIVE HARPSS RESONATORS WITH
REDUCED MOTIONAL RESISTANCE
Siavash Pourkamali and Farrokh Ayazi
School of Electrical and Computer Engineering, Georgia Institute of Technology
Atlanta, GA 30332-0250
ABSTRACT
This paper reports on implementation and high-Q operation
of thick bulk mode VHF capacitive disk resonators with reduced
motional resistance. Single crystal silicon (SCS) disk resonators as
thick as 18 m with capacitive gap size of 160nm (aspect
ratio>110) are fabricated on SOI substrates using a three-mask
version of the HARPSS on SOI process. The new resonator design
with increased number of electrodes as well as larger device
thickness results in over 20X lower motional resistance and larger
signal to noise ratio comparing to the previously demonstrated thin
VHF HARPSS resonators. Quality factor as high as 25,900 is
measured for an 18 m thick side-supported disk resonator in air at
the frequency of 149.3MHz. The same resonator exhibits a quality
factor of 45,700 in vacuum.
INTRODUCTION

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering