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Magnetotransport properties of lithographically defined lateral CoNi80Fe20 wires

Summary: Magnetotransport properties of lithographically defined lateral
Co’Ni80Fe20 wires
M. K. Husain and A. O. Adeyeyea)
Department of Electrical and Computer Engineering, Information Storage Materials Laboratory,
National University of Singapore, 4 Engineering Drive 3, Singapore 117576
Presented on 14 November 2002
In this article we have investigated the magnetization reversal process of laterally defined coupled
magnetic structures consisting of micron-sized sputtered Co and Ni80Fe20 wires lying side by side
at temperatures ranging from 3 to 300 K. We have used a microfabrication technique to create an
array of planar, laterally coupled magnetic wires made of two ferromagnetic materials. We observed
two distinct peaks in the magnetoresistance MR curves corresponding to the magnetization
reversals of Co and Ni80Fe20 wires. Below a critical temperature of 20 K we observed an asymmetric
shift in the Ni80Fe20 peak position for both forward and reverse field sweeps due to the exchange
coupling between the ferromagnetic (Ni80Fe20) and antiferromagnetic Co≠oxide at the interface of
Co and Ni80Fe20 formed during fabrication parts. The Co peaks gradually disappeared as the
temperature was reduced. At low temperature we also observed that the Ni80Fe20 peaks in the MR
loops are considerably shifted to larger fields corresponding to the increase in coercivity. © 2003
American Institute of Physics. DOI: 10.1063/1.1540179
Laterally defined micron and submicron ferromagnetic


Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore


Collections: Physics; Materials Science