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Thermodynamic and electrostatic analysis of threading dislocations in epitaxial ferroelectric films
 

Summary: Thermodynamic and electrostatic analysis of threading dislocations in
epitaxial ferroelectric films
I. B. Misirlioglu, S. P. Alpay,a
and M. Aindow
Department of Materials Science & Engineering and Institute of Materials Science, University of
Connecticut, Storrs, Connecticut 06269
V. Nagarajan
School of Materials Science and Engineering, University of New South Wales, Sydney NSW 2052, Australia
Received 23 September 2005; accepted 11 January 2006; published online 10 March 2006
The role of threading dislocations on the electrical properties of epitaxial ferroelectric films is
analyzed using a thermodynamic formalism and basic electrostatics. The modeling is carried out for
a 300 nm thick 001 PbZr0.2Ti0.8O3 on 001 SrTiO3 which displays a large population of threading
dislocations as determined by transmission electron microscopy. Results show that although the
phase transformation characteristics of ferroelectric films containing threading dislocations are
altered such that the transformation is "smeared" over a temperature interval due to local strain
variations, these defects do not have as profound an effect on the electrical properties as the misfit
dislocations. 2006 American Institute of Physics. DOI: 10.1063/1.2178194
The continued downscaling of semiconductor devices
has resulted in functional materials being confined to nanom-
eter size volumes, and they are, therefore, liable to be se-

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science