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Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaNGaN heterostructure field-effect transistor
 

Summary: Trap characterization by gate-drain conductance and capacitance
dispersion studies of an AlGaNÕGaN heterostructure field-effect transistor
E. J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, and E. T. Yua)
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla,
California 92093-0407
G. J. Sullivan
Rockwell International Science Center, Thousand Oaks, California 91358
J. M. Redwing
Epitronics/ATMI, Phoenix, Arizona 85027
Received 14 December 1999; accepted for publication 21 February 2000
Gate-drain capacitance and conductance measurements were performed on an Al0.15Ga0.85N/GaN
heterostructure field-effect transistor to study the effects of trap states on frequency-dependent
device characteristics. By varying the measurement frequency in addition to the bias applied to the
gate, the density and time constants of the trap states have been determined as functions of gate bias.
Detailed analysis of the frequency-dependent capacitance and conductance data was performed
assuming models in which traps are present at the heterojunction interface traps , in the AlGaN
barrier layer bulk traps , and at the gate contact metal­semiconductor traps . Bias-dependent
measurements were performed at voltages in the vicinity of the transistor threshold voltage, yielding
time constants on the order of 1 s and trap densities of approximately 1012
cm 2

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego
Yu, Edward T. - Department of Electrical and Computer Engineering, University of Texas at Austin

 

Collections: Engineering; Materials Science; Physics