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Summary: Compact Models for Double Gate MOSFET with Quantum Mechanical Effects Using
Lambert Function
H. Abebe*
, E. Cumberbatch**
, H. Morris**
and V. Tyree*
*
USC Viterbi School of Engineering, Information Sciences Institute, MOSIS service,
Marina del Rey, CA 90292, USA. Tel: (310) 448-8740, Fax: (310) 823-5624,
e-mail: abebeh@mosis.com and tyree@mosis.com
**
Claremont Graduate University, School of Mathematical Sciences,
710 N College Ave, Claremont, CA 91711, USA. Tel: (909) 607-3369,
Fax: (909) 621-8390, e-mail: ellis.cumberbatch@cgu.edu and hedley.morris@cgu.edu
ABSTRACT
This paper is a continuation of the work presented in [5].
Iterative compact device models with quantum mechanical
effects for a Double Gate (DG) MOSFET are presented
using the Lambert function approach [4, 5]. The quantum
model is based on the triangular potential and band gap
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