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Physical models for coupled electromechanical analysis of silicon nanoelectromechanical systems
 

Summary: Physical models for coupled electromechanical analysis of silicon
nanoelectromechanical systems
Zhi Tang, Yang Xu, Gang Li, and N. R. Alurua
Department of Mechanical and Industrial Engineering, Beckman Institute for Advanced Science and
Technology, University of Illinois at Urbana­Champaign, Urbana, Illinois 61801
Received 28 July 2004; accepted 4 March 2005; published online 24 May 2005
Nanoelectromechanical systems NEMS can be designed and characterized by understanding the
interaction and coupling between the mechanical, electrical, and the van der Waals energy domains.
In this paper, we present physical models and their numerical simulation for coupled electrical and
mechanical analysis of silicon NEMS. A nonlinear continuum elastic model is employed for
mechanical analysis. The material properties required in the continuum model are extracted from
molecular-dynamics simulations. We present three electrostatic models--namely, the classical
conductor model, the semiclassical model, and the quantum-mechanical model, for electrostatic
analysis of NEMS at various length scales. The electrostatic models also account for the corrections
to the energy gap and the effective mass due to the strain in the silicon nanostructure. A continuum
layer approach is introduced to compute the van der Waals forces. The coupling between the
mechanical, electrical, and the van der Waals energy domains as well as their numerical
implementation is described. Numerical results are presented for several silicon NEM switches to
understand the static electromechanical pull-in behavior. © 2005 American Institute of Physics.
DOI: 10.1063/1.1897483

  

Source: Aluru, Narayana R. - Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign

 

Collections: Engineering; Materials Science