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Summary: 512 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 17, NO. 2, APRIL 2008
Piezoelectric-on-Silicon Lateral Bulk Acoustic
Wave Micromechanical Resonators
Gavin K. Ho, Member, IEEE, Reza Abdolvand, Member, IEEE, Abhishek Sivapurapu,
Shweta Humad, and Farrokh Ayazi, Senior Member, IEEE
Abstract--This paper reports on the design, fabrication, and
characterization of piezoelectrically-transduced micromechanical
single-crystal-silicon resonators operating in their lateral bulk
acoustic modes to address the need for high-Q microelectronic-
integrable frequency-selective components. A simple electro-
mechanical model for optimizing performance is presented. For
verification, resonators were fabricated on 5-µm-thick silicon-on-
insulator substrates and use a 0.3-µm zinc oxide film for transduc-
tion. A bulk acoustic mode was observed from a 240 µm × 40 µm
resonator with a 600- impedance (Q = 3400 at P = 1 atm) at
90 MHz. A linear resonator absorbed power of -0.5 dBm and an
output current of 1.3 mA rms were measured. The same device
also exhibited a Q of 12 000 in its fundamental extensional mode
at a pressure of 5 torr. [2006-0091]
Index Terms--Bulk acoustic wave resonator, microelectro-
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