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1054 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 13, NO. 6, DECEMBER 2004 VHF Single Crystal Silicon Capacitive Elliptic
 

Summary: 1054 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 13, NO. 6, DECEMBER 2004
VHF Single Crystal Silicon Capacitive Elliptic
Bulk-Mode Disk Resonators--Part II:
Implementation and Characterization
Siavash Pourkamali, Student Member, IEEE, Zhili Hao, Member, ASME, and Farrokh Ayazi, Member, IEEE
Abstract--This paper, the second of two parts, reports on the
implementation and characterization of high-quality factor (Q)
side-supported single crystal silicon (SCS) disk resonators. The res-
onators are fabricated on SOI substrates using a HARPSS-based
fabrication process and are 3 to 18 m thick. They consist of a
single crystal silicon resonant disk structure and trench-refilled
polysilicon drive and sense electrodes. The fabricated resonators
have self-aligned, ultra-narrow capacitive gaps in the order of
100 nm. Quality factors of up to 46 000 in 100 mTorr vacuum and
26 000 at atmospheric pressure are exhibited by 18 m thick SCS
disk resonators of 30 m in diameter, operating in their elliptical
bulk-mode at 150 MHz. Motional resistance as low as 43.3 k

was measured for an 18- m-thick resonator with 160 nm capac-
itive gaps at 149.3 MHz. The measured electrostatic frequency

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering