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phys. stat. sol. (c) 0, No. 7, 25372540 (2003) / DOI 10.1002/pssc.200303547 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
 

Summary: phys. stat. sol. (c) 0, No. 7, 2537≠2540 (2003) / DOI 10.1002/pssc.200303547
© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Carbon doping of cubic GaN
under gallium-rich growth conditions
D. J. As*
, D. G. Pacheco-Salazar**
, S. Potthast, and K. Lischka
Department of Physics, Faculty of Sciences, University of Paderborn, Warburger Strasse 100,
33095 Paderborn, Germany
Received 7 April 2003, revised 6 June 2003, accepted 16 September 2003
Published online 18 November 2003
PACS 68.55.Ln, 71.55.Eq, 73.61.Ey, 78.55.Cr, 81.15.Hi
Successful p-type doping of cubic GaN by carbon grown under Ga-rich conditions is reported with
maximum hole concentration of 6 ◊ 10
18
cm
≠3
and hole mobility of 19 cm2
/Vs at room temperature, re-
spectively. Cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) on a semiinsu-

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics