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IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 7, NO. 11, NOVEMBER 1997 377 Lightly Doped Emitter HBT for Low-Power Circuits
 

Summary: IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 7, NO. 11, NOVEMBER 1997 377
Lightly Doped Emitter HBT for Low-Power Circuits
C. E. Chang, P. F. Chen, P. M. Asbeck, Senior Member, IEEE, L. T. Tran,
D. C. Streit, Senior Member, IEEE, and A. K. Oki, Member, IEEE
Abstract--We report an approach to reduce the base­emitter
capacitance in AlGaAs/GaAs heterojunction bipolar transistors
(HBT's) by adding a lightly doped emitter (LDE) region together
with appropriate planar () doping region to a conventional
base­emitter junction. This improves both the ft and for low
collector current density (Jc) operation while preserving the high
peak ft at high Jc. When applied to a current mode logic 128/129
programmable prescaler, the LDE HBT results in a reduction in
power dissipation and improved bandwidth without any circuit
modifications.
Index Terms-- Frequency conversion, heterojunction bipolar
transistor, MMIC's.
I. INTRODUCTION
AlGaAs/GaAs-BASED heterojunction bipolar transistors
(HBT's) are being applied in a variety of microwave and
high-speed digital circuits. Typically, HBT's are biased at high

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering