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Piezoelectric polarization associated with dislocations in wurtzite GaN Changchun Shi,a)
 

Summary: Piezoelectric polarization associated with dislocations in wurtzite GaN
Changchun Shi,a)
Peter M. Asbeck,b)
and Edward T. Yub)
University of California, San Diego, La Jolla, California 92093-0407
Received 12 October 1998; accepted for publication 20 November 1998
The piezoelectric polarization and its associated charge density are calculated for edge, screw, and
mixed dislocations oriented parallel to the c axis in wurtzite GaN. It is shown that the polarization
field generated by screw components of dislocations is divergence free, and thus does not generate
electric fields. Edge dislocations produce polarization fields that have nonzero divergence only at
interfaces. These characteristics minimize the electrical and optical effects of the dislocations
mediated by the piezoelectric effect. 1999 American Institute of Physics.
S0003-6951 99 05304-8
GaN and related materials are the objects of considerable
research due to their emerging importance in applications
ranging from light emission to microwave power
amplification.1
In most cases, epitaxial layers of GaN contain
a high density of defects with dislocations, which form be-
cause of the absence of a suitable lattice-matched substrate

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering