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INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 21 (2006) 846851 doi:10.1088/0268-1242/21/7/003
 

Summary: INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Semicond. Sci. Technol. 21 (2006) 846­851 doi:10.1088/0268-1242/21/7/003
Photoluminescence measurements on
cubic InGaN layers deposited on a SiC
substrate
D G Pacheco-Salazar1,5, J R Leite1,4, F Cerdeira2, E A Meneses2,
S F Li3, D J As3 and K Lischka3
1
Instituto de F´isica, Universidade de S~ao Paulo, Caixa Postal 66318, S~ao Paulo, SP, Brazil
2
Instituto de F´isica `Gleb Wataghin', Universidade Estadual de Campinas,
Caixa Postal 6165, 13083-970 Campinas, SP, Brazil
3
Department of Physics, University of Paderborn, Warburger Strasse 100,
D-33098 Paderborn, Germany
E-mail: eliermes@ifi.unicamp.br
Received 4 November 2005, in final form 11 April 2006
Published 16 May 2006
Online at stacks.iop.org/SST/21/846
Abstract

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics