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IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS--II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 50, NO. 4, APRIL 2003 181 A Current Mirroring Integration Based Readout Circuit
 

Summary: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS--II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 50, NO. 4, APRIL 2003 181
A Current Mirroring Integration Based Readout Circuit
for High Performance Infrared FPA Applications
Haluk Kulah and Tayfun Akin
Abstract--This paper reports a current mirroring integration (CMI)
CMOS readout circuit for high-resolution infrared focal plane array (FPA)
applications. The circuit uses a feedback structure with current mirrors to
provide stable bias voltage across the photodetector diode, while mirroring
the diode current to an integration capacitor. The integration capacitor can
be placed outside of the unit pixel, reducing the pixel area and allowing
to integrate the current on larger capacitance for larger charge storage
capacity and dynamic range. The CMI unit cell allows almost rail-to-rail
voltage swing on the integration capacitance for low voltage operation. The
detector bias voltage can be adjusted independently for various detector re-
quirements. By virtue of current feedback in the CMI structure, very low
(ideally zero) input impedance is achieved. The unit-cell contains just nine
MOS transistors and occupies 20 m 25 m area in a 0.8- m CMOS
process. The CMI circuit provides a maximum charge storage capacity of
5.25 10 electrons and a maximum transimpedance of 6 10
for a

  

Source: Akin, Tayfun - Department of Electrical and Electronics Engineering, Middle East Technical University

 

Collections: Engineering