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Properties of TaGe,,O...N as a diffusion barrier for Cu on Si S. Rawal and D. P. Nortona
 

Summary: Properties of TaGe,,O...N as a diffusion barrier for Cu on Si
S. Rawal and D. P. Nortona
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
Hiral Ajmera and T. J. Anderson
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
L. McElwee-White
Department of Chemistry, University of Florida, Gainesville, Florida 32611
Received 26 June 2006; accepted 26 December 2006; published online 1 February 2007
The properties of TaGe O N as a diffusion barrier for Cu on silicon have been investigated.
TaGe O N was deposited on single crystal p-Si 001 by reactive sputtering. This was followed by
in situ deposition of Cu. Diffusion barrier tests were conducted by subsequent annealing
of individual samples in Ar atmosphere at higher temperature. The films were characterized by
x-ray diffraction, Auger electron spectroscopy, and four-point probe. The results indicate that
TaGe O N fails after annealing at 500 C for 1 h compared to Ta O N which fails after annealing
at 400 C for 1 h indicating better diffusion barrier properties. 2007 American Institute of
Physics. DOI: 10.1063/1.2435979
As the minimum feature size in integrated circuits con-
tinues to decrease, there is a need to replace Al in intercon-
nects due to the limited conductivity and poor electromigra-
tion performance of Al under high current densities. Cu is a

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science