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MRS Internet J. Nitride Semicond. Res. 8, 8 (2003). 1 2003 The Materials Research Society

Summary: MRS Internet J. Nitride Semicond. Res. 8, 8 (2003). 1
2003 The Materials Research Society
M R S Internet Journal ResearchNitride Semiconductor
High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN
Schottky Photodiodes
Necmi Biyikli1
, Tolga Kartaloglu1
, Orhan Aytur1
, Ibrahim Kimukin2
and Ekmel Ozbay2
1Bilkent University Dept. of Electrical and Electronics Engineering,
2Bilkent University Dept. of Physics,
(Received Friday, September 19, 2003; accepted Thursday, October 30, 2003)
We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based
Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/
Al0.2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication
process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO
and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity
values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted
in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB


Source: Aytur, Orhan - Department of Electrical Engineering, Bilkent University
Ozbay, Ekmel - Department of Electrical and Rlectronics Engineering & Physics, Bilkent University


Collections: Engineering; Materials Science; Physics