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288 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 9, NO. 3, SEPTEMBER 2000 High Aspect-Ratio Combined Poly and Single-Crystal
 

Summary: 288 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 9, NO. 3, SEPTEMBER 2000
High Aspect-Ratio Combined Poly and Single-Crystal
Silicon (HARPSS) MEMS Technology
Farrokh Ayazi, Member, IEEE, and Khalil Najafi, Fellow, IEEE
Abstract--This paper presents a single-wafer high aspect-ratio
micromachining technology capable of simultaneously producing
tens to hundreds of micrometers thick electrically isolated poly
and single-crystal silicon microstructures. High aspect-ratio
polysilicon structures are created by refilling hundreds of microm-
eters deep trenches with polysilicon deposited over a sacrificial
oxide layer. Thick single-crystal silicon structures are released
from the substrate through the front side of the wafer by means
of a combined directional and isotropic silicon dry etch and
are protected on the sides by refilled trenches. This process is
capable of producing electrically isolated polysilicon and silicon
electrodes as tall as the main body structure with various size
capacitive air gaps ranging from submicrometer to tens of
micrometers. Using bent-beam strain sensors, residual stress in
80- m-thick 4- m-wide trench-refilled vertical polysilicon beams
fabricated in this technology has been measured to be virtually

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology
Georgia Institute of Technology, School of Electrical and Computer Engineering, Center for MEMS and Microsystems Technologies

 

Collections: Engineering