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Dopant Diffusion under Pressure and Stress Michael J. Aziz
 

Summary: Dopant Diffusion under Pressure and Stress
Michael J. Aziz
Division of Engineering and Applied Sciences
Harvard University
Cambridge, MA USA
maziz@harvard.edu
Abstract--The effects of stress on equilibrium point defect
populations and on dopant diffusion in strained semiconductors
are reviewed. The thermodynamic relationships presented
permit the direct comparison of hydrostatic and biaxial stress
experiments and of atomistic calculations of defect volumetrics
for any proposed mechanism. Experiments on the effects of
pressure and stress on the diffusivity of B and Sb are reviewed.
The opposite effects of hydrostatic compression and of biaxial
compression on the diffusivity are a consequence of the non-local
nature of the point defect formation volume. Comparisons
between these effects are made to determine quantitatively the
anisotropy of the migration volume. The requirements to permit
the prediction of the effect of an arbitrary stress state on
diffusion in an arbitrary direction are discussed.

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science