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1 JOURNALOF NANOSCIENCEAND NANCYECHNOLOGY New Hetero Silicon-Carbon Nanostructure
 

Summary: 1 JOURNALOF NANOSCIENCEAND NANCYECHNOLOGY
New Hetero Silicon-Carbon Nanostructure
Formation Mechanism
S. P. Song,aM. A. ~ r i r n p , ~V. M. Ayresal* C. J. C ~ l l a r d , ~J. P. Holl~way,~
and M. L. BrakeC
aDepartmentof Electricaland Computer Engineering, Michigan State University,
East Lansing, Michigan, 48824, USA
b~epartmentof ChemicalEngineeringand Materials Science,Michigan State University,
East Lansing, Michigan, 48824, USA
Department of Nuclear Engineeringand RadiologicalSciences, University of Michigan,
Ann ~ r b o tMichigan, 48109, USA
We report the formation of silicon and carbon hetero-nanostructures in an inductively coupled
plasma system by a simultaneousgrowthletching mechanism. Multi-walled carbon nanotubes were
grown during one, three and five hour depositions, while tapered silicon nanowires were progres-
sively etched. The carbon and silicon nanostructures and the interfaces between them were stud-
ied by electron microscopies and micro Raman spectroscopies. The potential of this method for
large-scale controlled production of nano heterostructures without the requirement of a common
catalyst is explored.
Keywords: Carbon Nanotubes, Silicon Nanowires, Heterostructure, InductivelyCoupled Plasma.
'Author to whom correspondence should be addressed.

  

Source: Ayres, Virginia - Department of Electrical and Computer Engineering, Michigan State University

 

Collections: Materials Science; Biology and Medicine