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Solute trapping of group 111,IV, and V elements in silicon by an aperiodic stepwise growth mechanism
 

Summary: Solute trapping of group 111,IV, and V elements in silicon by an aperiodic
stepwise growth mechanism
Riccardo Reitano,@ Patrick M. Smith,b) and Michael J. Aziz
Division of Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138
(Received 24 February 1994; accepted for publication 25 April 1994)
With rapid solidification following pulsed laser melting, we have measured the dependence on
interface orientation of the amount of solute trapping of several group III, IV, and V elements (As,
Ga, Ge, In, Sb, Sn) in Si. The aperiodic stepwise growth model of Goldman and Aziz accurately fits
both the velocity and orientation dependence of solute trapping of all of these solutes except Ge. The
success of the model implies a ledge structure for the crystal/melt interface and a step-flow
mechanism for growth from the melt. In addition, we have observed an empirical inverse correlation
between the two free parameters (-"diffusive speeds") in this model and the equilibrium solute
partition coefficient of a system. This correlation may be used to estimate values of these free
parameters for other systems in which solute trapping has not or cannot be measured. The possible
microscopic origin of such a correlation is discussed.
1.INTRODUCTION
The description of solidification phenomena over a range
of interface velocities several orders of magnitude wide
(lo-*-lo' m/s) requires knowledge of the equilibrium so-
lidification properties as well as how the material behaves

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science