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A High-Efficiency SiGe BiCMOS WCDMA Power Amplifier with Dynamic Current Biasing for ImprovedAverage Efficiency
 

Summary: TUlC-2
A High-Efficiency SiGe BiCMOS WCDMA Power Amplifier with
Dynamic Current Biasing for ImprovedAverage Efficiency
Junxiong Deng, hasad Gudem, Lawrence E. Larson, and Peter M. Asbeck
Electrical and Computer Department, University of California San Diego, La Jolla, CA 92093
AbstrocI - This paper demonstrates a WCDMA single-
stage power amplifier fabricated in a 0.25pm SiGe BiCMOS
process. With dynamic biasing of the collector Current, the
average power effcieney is improved by more than a factor
bf tno compared to a typical class AB power amplifier. The
`pwer amplifier satisfies the 3GPP Class-Ill WCDMA
`Adjacent Channel Power Ratio (ACPR) speeilications
(ACPR,SM=-33dBc and ACPR-lOM=558.8dBc) with
23.9dBm average channel output power. The measured
output power ai the IdB compressioo point is 259dBm.
Index Terms - Silicon Germmiurn, power amplificrs,
WCDMA, average power efliciency, dynamic hinsing.
1.INTRODUCTION
In recent years, Silicon Germanium (SiGe) has become a
competitive candidate for the development of handset

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego
Larson, Larry - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering