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Journal of Crystal Growth 274 (2005) 1420 Growth and characterization of single-crystalline gallium
 

Summary: Journal of Crystal Growth 274 (2005) 14≠20
Growth and characterization of single-crystalline gallium
nitride using (1 0 0) LiAlO2 substrates
M.D. Reed, O.M. Kryliouk√, M.A. Mastro, T.J. Anderson
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
Received 15 April 2004; accepted 22 September 2004
Communicated by C.R. Abernathy
Abstract
Self-separating single-crystalline gallium nitride films were grown by hydride-metalorganic vapor-phase epitaxy (H-
MOVPE) on LiAlO2 (LAO) substrates. Nitridation of the LAO substrate leads to the reconstruction of the surface and
to the formation of a thin layer of nitrided material. Free-standing films of 35≠40 mm thick were grown by a succession
of techniques using both MOVPE and hydride vapor-phase epitaxy (HVPE) growth steps. The films were characterized
by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), secondary ion
mass spectrometry (SIMS), and micro-Raman spectroscopy to investigate the effect of the initial MOVPE step.
r 2004 Elsevier B.V. All rights reserved.
PACS: 81.15.K; 81.05.C; 81.05.D
Keywords: A1. Characterization; A1. Substrates; A3. Hydride vapor-phase epitaxy; B1. GaN; B2. Semiconducting III≠V materials
1. Introduction
The III-nitride wide band-gap semiconductors
possess vast potential for optoelectronics, and

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science