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Appl Phys A (2010) 98: 589594 DOI 10.1007/s00339-009-5462-1

Summary: Appl Phys A (2010) 98: 589594
DOI 10.1007/s00339-009-5462-1
Fabrication and sub-band-gap absorption of single-crystal Si
supersaturated with Se by pulsed laser mixing
Malek Tabbal Taegon Kim David N. Woolf
Byungha Shin Michael J. Aziz
Received: 25 March 2009 / Accepted: 20 October 2009 / Published online: 12 November 2009
Springer-Verlag 2009
Abstract Selenium supersaturated silicon layers were fab-
ricated by pulsed excimer laser induced liquid-phase mixing
of thin Se films on Si(001) wafers. Sufficiently low Se cov-
erage avoids destabilization of rapid epitaxial solidification,
resulting in supersaturated solid solutions free of extended
defects, as shown by transmission electron microscopy. The
amount of retained Se depends on the original film thick-
ness, the laser fluence, and the number of laser pulses irradi-
ating the same spot on the surface. Using this method, Se has
incorporated into the topmost 300 nm of the silicon with a
concentration of 0.1 at.%. Channeling Rutherford backscat-
tering spectrometry measurements show that the substitu-


Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University


Collections: Physics; Materials Science