Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
phys. stat. sol. (c) 2, No. 7, 24202423 (2005) / DOI 10.1002/pssc.200461562 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
 

Summary: phys. stat. sol. (c) 2, No. 7, 2420­2423 (2005) / DOI 10.1002/pssc.200461562
© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
The influence of interdiffusion on strain energy
in the GaN­sapphire system
Sang Won Kang*
, Hyun Jong Park, Taewoong Kim, Todd Dann, Olga Kryliouk,
and Tim Anderson
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
Received 13 July 2004, revised 15 November 2004, accepted 27 January 2005
Published online 17 March 2005
PACS 68.35.Fx, 68.35.Gy
The impact of interdiffusion on strain energy in the GaN-sapphire system was studied. Gallium nitride
epitaxial layers were grown on (0001) Al2O3 by low-pressure MOCVD at 850 °C, V/III ratio = 3600, P=
100 Torr using TEGa and NH3 sources in a N2 carrier. The ~0.3 µm thick films were then annealed at
growth temperature in N2 for a period of 30 to 120 min. The Al and Ga diffusion coefficients at 850 °C
were estimated as DAl = 3.98 × 10­17
cm2
/s and DGa = 4.81 × 10­17
cm2
/s from SIMS depth profile data. A

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science