Summary: Resistivity of V2O3 thin films deposited on a-plane ,,110... and c-plane ,,001...
sapphire by pulsed laser deposition
B. S. Allimi,1
S. P. Alpay,1,a
C. K. Xie,2
B. O. Wells,2
J. I. Budnick,2
and D. M. Pease2
Materials Science and Engineering Program, Chemical, Materials, and Biomolecular Engineering
and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06279, USA
Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, Connecticut
Received 20 March 2008; accepted 16 April 2008; published online 19 May 2008
Thin films of V2O3 with thickness of 215 nm were grown on a- and c-plane sapphire by pulsed laser
deposition with 001 V2O3 001 Al2O3 and 110 V2O3 110 Al2O3 epitaxy. The effects of the
growth direction on the electrical resistivity of the films were examined. Films on c-plane sapphire
displayed a metal-to-insulator transition at T=180 K compared to T=160 K in single-crystal V2O3.
The films on a-plane sapphire, however, showed an insulator-to-insulator transition at T=186 K.