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EPITAXIAL SILICON MICROSHELL VACUUM-ENCAPSULATED CMOS-COMPATIBLE 200 MHz BULK-MODE RESONATOR
 

Summary: EPITAXIAL SILICON MICROSHELL VACUUM-ENCAPSULATED
CMOS-COMPATIBLE 200 MHz BULK-MODE RESONATOR
Kuan-Lin Chen1
, Hengky Chandrahalim2
, Andrew B. Graham1
,
Sunil A. Bhave2
, Roger T. Howe1
and Thomas W. Kenny1
1
Stanford University, Stanford, California, USA
2
Cornell University, Ithaca, New York, USA
ABSTRACT
This paper shows the first successful combination of
dielectrically-transduced 200 MHz resonators with the
epi-silicon encapsulation process, and demonstrates a set
of important capabilities needed for the construction of
CMOS-compatible RF MEMS components. The result
shows the resonant frequency of 207 MHz and a quality

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering