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May 1, 1989 / Vol. 14, No. 9 / OPTICS LETTERS 441 Solid-state XeF(D-X)laser at 286nm

Summary: May 1, 1989 / Vol. 14, No. 9 / OPTICS LETTERS 441
Solid-state XeF(D- X)laser at 286nm
A. I. Katz, J. Feld, and V. A. Apkarian
Department of Chemistry, University of California,Irvine, Irvine, California 92717
Received December 12, 1988; accepted February 23, 1989
XeF-doped Ar crystals pumped at 248 nm undergo stimulated emissionover the D-X band at 286nm.
narrowing measurements indicate a net gain in excess of 6 cm-
Rare-gas halide exciplexes are the most commonly
used family of gas-phase UV lasers.' Some of the
characteristics of these systems that make them ideal-
ly suited for laser applications are the bound-to-repul-
sive nature of the lasing transitions, the large transi-
tion dipoles associated with these charge-transfer
transitions, and the predominance of radiation as the
decay mechanism for the lower excited ionic states-
at least in low-density rare-gas media. Cryogenic
rare-gas solids doped with atomic halogens or doubly


Source: Apkarian, V. Ara - Department of Chemistry, University of California, Irvine


Collections: Chemistry