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224 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 1, JANUARY 2011 1.7 GHz 0.18 m CMOS Tunable TIA
 

Summary: 224 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 1, JANUARY 2011
A 76 dB
1.7 GHz 0.18 m CMOS Tunable TIA
Using Broadband Current Pre-Amplifier for
High Frequency Lateral MEMS Oscillators
Hossein Miri Lavasani, Member, IEEE, Wanling Pan, Member, IEEE, Brandon Harrington, Member, IEEE,
Reza Abdolvand, Member, IEEE, and Farrokh Ayazi, Senior Member, IEEE
Abstract--This paper reports on the design and characterization
of a high-gain tunable transimpedance amplifier (TIA) suitable
for gigahertz oscillators that use high-Q lateral micromechanical
resonators with large motional resistance and large shunt parasitic
capacitance. The TIA consists of a low-power broadband current
pre-amplifier combined with a current-to-voltage conversion stage
to boost the input current before delivering it to feedback voltage
amplifiers. Using this approach, the TIA achieves a constant gain
of 76 dB-Ohm up to 1.7 GHz when connected to a 2 pF load at the
input and output with an input-referred noise below 10 pA Hz
in the 100 MHz to 1 GHz range. The TIA is fabricated in a
1P6M 0.18 m CMOS process and consumes 7.2 mW. To demon-
strate its performance in high frequency lateral micromechanical

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering