Summary: In situ investigation of the selenization kinetics of Cu­Ga precursors
using time-resolved high-temperature X-ray diffraction
W.K. Kim a
, E.A. Payzant b
, T.J. Anderson a,, O.D. Crisalle a
a
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA
b
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
Available online 19 December 2006
Abstract
In situ high-temperature X-ray diffraction was used to investigate the reaction mechanism and kinetics of CuGaSe2 formation from Cu­Ga
precursors during selenization. The precursor films were deposited in a migration enhanced molecular beam epitaxial reactor on Mo-coated thin
glass substrates. During the selenization CuSe forms in the temperature range of approximately 260 to 370 °C, and the onset of formation of
CuGaSe2 occurred at approximately 300 °C. The kinetic analysis using a modified Avrami model suggests the formation of CuGaSe2 from
selenization of Cu­Ga films follows a one-dimensional diffusion-controlled reaction with an apparent activation energy of 109 (±7) kJ/mol.
© 2006 Elsevier B.V. All rights reserved.
Keywords: X-ray diffraction; CuGaSe2; Selenization; Avrami model
1. Introduction
Chalcopyrite Cu(InGa)Se2 (CIGS) is a proven absorber

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

Collections: Materials Science