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Non-ohmic spin transport in n-type doped silicon Hyuk-Jae Jang, Jing Xu, Jing Li, and Biqin Huang
 

Summary: Non-ohmic spin transport in n-type doped silicon
Hyuk-Jae Jang, Jing Xu, Jing Li, and Biqin Huang
Department of Electrical and Computer Engineering, University of Delaware, Newark,
Delaware 19716, USA
Ian Appelbaum
Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park,
Maryland 20742-4111, USA
Received 11 August 2008; published 29 October 2008; publisher error corrected 3 November 2008
We demonstrate the injection and transport of spin-polarized electrons through n-type doped silicon with
in-plane spin valve and perpendicular magnetic-field spin precession and dephasing "Hanle effect" measure-
ments. A voltage applied across the transport layer is used to vary the confinement potential caused by
conduction-band bending and to control the dominant transport mechanism between drift and diffusion. By
modeling the transport in this device with a Monte Carlo scheme, we simulate the observed spin polarization
and Hanle features, showing that the average transit time across the short Si transport layer can be controlled
over four orders of magnitude with applied voltage. As a result, this modeling allows inference of a long
electron-spin lifetime despite the short transit length.
DOI: 10.1103/PhysRevB.78.165329 PACS number s : 85.75. d, 72.25.Dc, 72.25.Hg, 85.30.Tv
I. INTRODUCTION
It has been a longstanding goal in semiconductor spin-
tronics to inject, transport, manipulate, and detect spin-

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science