| | |
Summary: Growth of V2O3 thin films on a-plane (110) and c-plane (001)
sapphire via pulsed-laser deposition
B.S. Allimi, S.P. Alpay,a)
and D. Goberman
Materials Science and Engineering Program and Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06279
T. Huang, J.I. Budnick, and D.M. Pease
Department of Physics and Institute of Materials Science, University of Connecticut,
Storrs, Connecticut 06279
A.I. Frenkel
Department of Physics, Yeshiva University, New York, New York 10016
(Received 23 April 2007; accepted 4 June 2007)
We report the direct deposition of epitaxial 215-nm-thick vanadium sesquioxide
(V2O3) films on a- and c-plane sapphire substrates from powder-pressed V2O3 targets
via pulsed-laser deposition (PLD) in an evacuated deposition chamber devoid of O2.
The films were characterized using x-ray diffraction (XRD), x-ray photoemission
spectroscopy (XPS), x-ray absorption fine structure (XAFS) spectroscopy, and atomic
force microscopy (AFM). XPS measurements confirmed that the stoichiometry of the
powder was conserved in the films. XRD patterns together with XAFS measurements
proved that V2O3 was epitaxial on the a-sapphire substrate with epitaxial relation
|
