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Strain relaxation during in situ growth of SrTiO3 thin films Luke S.-J. Peng,a)
 

Summary: Strain relaxation during in situ growth of SrTiO3 thin films
Luke S.-J. Peng,a)
X. X. Xi,b)
and Brian H. Moeckly
Superconductor Technologies Inc., 969 West Maude Avenue, Sunnyvale, California 94085
S. P. Alpay
Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269
Received 7 July 2003; accepted 6 October 2003
We report a real-time observation of strain relaxation during in situ growth of SrTiO3 thin films by
measuring the in-plane lattice constant at the film surface using reflection high-energy electron
diffraction. The initial misfit strain in the SrTiO3 film is tensile on MgO and compressive on LaAlO3
as expected from the lattice mismatches between the film and the substrates. Strain relaxation begins
immediately after the deposition starts, but is not complete until the film thickness reaches 500
2500 depending on the substrate and the deposition temperature. The strain relaxation at the
growth temperature influences the film strain at room temperature, which is compressive for both
substrates for thin SrTiO3 films. 2003 American Institute of Physics.
DOI: 10.1063/1.1631055
Strain in ferroelectric thin films plays a significant role
in influencing their dielectric properties, which are important
for electronic applications.13

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science