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Transfer of patterned ion-cut silicon layers C. H. Yun, A. B. Wengrow, and N. W. Cheung
 

Summary: Transfer of patterned ion-cut silicon layers
C. H. Yun, A. B. Wengrow, and N. W. Cheung
Electronics Research Laboratory, University of California Berkeley, Berkeley, California 94720
Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau
Department of Electrical and Computer Engineering, University of California San Diego, La Jolla,
California 92093
Received 5 August 1998; accepted for publication 28 August 1998
The technique of transferring patterned ion-cut layers from one Si wafer to another was
demonstrated. The starting silicon wafer was masked with checkerboard and line patterns with a 3
m thick polymethylmethacrylate/photoresist and was implanted with 5 1016
H ions/cm2
at 150
keV. After stripping off the mask, the wafer was bonded to an oxide-coated receptor wafer through
low-temperature direct wafer bonding. Heat treatment of this bonded pair showed that the
hydrogen-induced silicon surface layer cleavage ion cut could propagate throughout about
16 m 16 m of nonimplanted material with implanted regions only 4 m wide. Mask width,
spacing, and implantation profiles through the mask shape were shown to have effects on the
internal microfracturing mechanisms. 1998 American Institute of Physics.
S0003-6951 98 00645-7
Three-dimensional electronic device integration offers

  

Source: Asbeck, Peter M. - Department of Electrical and Computer Engineering, University of California at San Diego

 

Collections: Engineering